Fluctuations & 1/f Noise
Research Gateway:
FNRG

Fluctuations & Noise Research Gateway 

FNRG - Fluctuations & Noise Research Gateway Proprietorship aims to explicate for collaborative & research purposes 1/f noise studies of Mr. Hayk V. Asriyan and network R&D activities; it acts in framework of Proprietorship registered and validly existing under the Laws of the Russian Federation. 

Bright, curious and amazing news and ideas concerning

the Omnipresence of 1/Omega (aka 1/f) noise

 

It is not a great secret that

ELF = Extremely low frequency (ELF) is
a term used to describe radiation frequencies from 3 to 300 Hz.

Amazingly, at the same time: 

Elf = An elf (plural elves) is a being of Germanic mythology. The elves were originally thought of as a race of divine beings (wights, vættir) endowed with magical powers, which they use both for the benefit and the injury of mankind. In medieval Norse mythology, they appear to have been divided into light elves and dark elves, difficult to delineate from the Æsir (gods) on one hand and the dvergar (dwarves) on the other.



List of several publications of FNRG owner in chronological order: important landmarking publications of the 1/f noise models development are marked by other color.

 

Transitional Model of 1/f noise “Roaming-phonon micro gradient (RPMG) model”

 

The Transitional model probation: test for electron-acoustic phonon  scattering domination case

 

1.   Gasparyan F.V., Melkonyan S.V. Asriyan H.V. The Influence of  Thermal Chaos of Phonon System on the Low-Frequency Noise in Semiconductor. Semiconductor Microelectronics. Proc. of 1st Nat. Conf., Dilijan, May 22-23,Yerevan, 1997, pp. 41-45 (In Russian).

2.  Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M. and Asriyan H.V. Temperature Chaos and the Lattice Character of the Hooge Parameter in Semiconductors. Modern Phys. Letters B, 1998,V.12, Nos.29 & 30, pp.1245-1254.  (In English).

 

The Transitional model probation: test for electron-homopolar and heteropolar optical  phonon  scattering domination case

    

3.   Gasparyan F.V., Melkonyan S.V., Asriyan H.V. Influence of Optical Phonons on the Low-Frequency Noises in the Homopolar and Heteropolar Semiconductors. Proc. of 2nd  Nat. Conf., Dilijan, May 21-24,Yerevan, 1999, pp. 35-44 (In Russian).

4.  Gasparyan F.V.,Melkonyan S.V., Aroutiounian V.M. and Asriyan H.V., 1/f Noise of Homopolar and Heteropolar Semiconductors, Int. J. of Modern Phys. B, Vol. 14, No. 7, 2000, pp. 751-760. (In English).

5.  Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Soukiassian P.,  Electrophysical and Photoelectrical Properties of UV-Range Injection Structures Made of Silicon Carbide, Applied Surface Science, Vol. 184, pp. 460-465, 2001. (In English).

6.  Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Soukiassian P., Electrophysical and Photoelectrical Properties of UV-range Injection Structures Made of Silicon Carbide, E - MRS 2001 Spring Meeting, June 5-8, 2001 Strasbourg, France. (In English).

 

The Transitional model probation at presence of crossed Electric and Magnetic Fields

 

7.  Asriyan H.V., Gasparyan F.V., Current 1/f Noise in Semiconductors at Presence of Electrical and Magnetic Fields Proc. of Third National Conf. on Semicond. Microelectronics, Sevan 10-12 Sept., Yerevan State University Press, Yerevan, p. 36, 2001 (In Russian).

8.  Asriyan H.V., Current 1/f Noise in Semiconductors at Crossed Electrical and Magnetic Fields, Proc. of Third National Conf. on Semicond. Microelectronics, Sevan 10-12 Sept., Yerevan State University Press, Yerevan, p. 45, 2001(In Russian). 

9.  Asriyan H.V., Gasparyan F.V., Melkonyan S.V., The Influence of Non Quantized Magnetic Field on the Behavior of 1/f Noise in Non-degenerate Semiconductors, J. of Contemporary Physics (Izv. Acad. Nauk. Arm.) 2004 (In Russian & English).

 

Theoretical prediction and justification of presence of 1/f noise new component conditioned by build-in electrical field

 

10. Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Built-in electric field as an additional source of 1/f noise in semiconductors, Noise and Information in Nanoelectronics, Sensors, and Standards part of SPIEs First International Symposium on Fluctuations and Noise, 1-4 June, Santa Fe, NM, USA, vol. 5115-49, (2003).

11. Gasparyan F.V., Asriyan H.V., Melkonyan S.V., Korman E. C., low-frequency noises in semiconductor photoresistors, Proc. of Forth National Conf. on Semicond. Microelectronics, Tcakhadzor 27-30 May., Yerevan State University Press, Yerevan pp. 51-54, 2003. (In English).

12. Melkonyan S.V., Gasparyan F.V., Aroutiounian V.M., Asriyan H.V., Korman E. C, Fluctuations of the current carriers mobility in homogeneous semiconductors, Proc. of Forth National Conf. on Semicond. Microelectronics, Tcakhadzor 27-30 May., Yerevan State University Press, Yerevan, pp.7-10, 2003 (In English).

13. Asriyan H.V., Gasparyan F.V., 1/f noise component conditioned by built-in electric field in semiconductors, Mod. Phys. Letters B18, pp.427-442, 2004. (In English).

 

Highlighting of some sensor applications of the Transitional Model

 

14. Asriyan H.V., Gasparyan F.V., Aroutiounian V.M., Melkonyan S.V., Soukiassian P., Low-frequency noise in non-homogeneously doped semiconductor, Sensors & Actuators A113, pp. 338-343, 2004. (In English).

15. In review chapter of Prof. F.V. Gasparyan:  Gasparyan F.V., Melkonyan S.V., H.V. Asriyan, 4-th topic in Chapter 8 Influence of Built-In Fields on the Efficiency of Monocrystalline Solar Cells written by Prof. F.V. Gasparyan in Recent Developments in Solar Energy Some aspects of SC reliability testing by methods of Noise Spectroscopy, Editor: Tom P. Hough, Nova Inc, 2005. (in English)

16. Asriyan H.V., Shatveryan A.A., Aroutiounian V.M., Gasparyan F.V., Melkonyan S.V., Mkhitharyan Z.H., Ayvazyan G., Semiconductor-metal interface influence on the bulk low-frequency noise behavior and role of the phonons refraction points, Noise and Information in Nanoelectronics, Sensors, and Standards III, Proc. of SPIE Vol. 5846-25, 2005. (in English)

 

Outlining Step of 1/f Noise New Model Development (A): "Phonon mechanism of mobility (equilibrium/non-equilibrium)  fluctuations"

 

17. Melkonyan S.V., Gasparyan F.V., Asriyan H.V., 1/f noise models based on localized and delocalized fluctuations of phonons distribution function. Proc. of 5-th International Conference on Micro  and Nano  - electronics, 16-19 September 2005, Agveran, Armenia, Yerevan State University Print, pp. 24-27, 2005 (in English).

 

Collaborative research

 

18. Z.H. Mkhitaryan, A.A. Shatveryan, G.A. Egiazaryan, Asriyan H.V., Low Frequency Noise in Porous Silicon Proc. of 5-th International Conference on Micro  and Nano - electronics, 16-19 September 2005, Agveran, Armenia, Yerevan State University Print, pp. 32-35, 2005 (in English).

 

Outlining 1/f Noise New Model Development (B) : "Phonon mechanism of mobility (equilibrium/non-equilibrium) fluctuations"

 

19. Melkonyan S.V., Gasparyan F.V., Asriyan H.V., "1/f - type noise in view of phonons interface percolation dynamics" American Institute of Physics, Proc. of the 18th International Conference on Noise and Fluctuations (ICNF 2005), Salamanca, Spain, September 19-23, 2005. Paper # R073, pp.87-91 (in English).

 

Exemplification of possibilities of practical applications of theoretically developed new concepts of "Phonons' refraction points" (request base SPIE publication of Dr. S.V. Melkonyan over that issue: smelkonyan@ysu.am).

 

20.  F.V. Gasparyan, S.V. Melkonyan, H.V. Asriyan. Influence of hydrogen on crystalline silicon surface conditions in view of 1/f noise reduction. Int. Sci. Journal for Alternative Energy and Ecology, #7, p.21 (2006).

21. F.V. Gasparyan, S.V. Melkonyan, H.V. Asriyan. Interface impact on 1/f noise formation and hydrogen gas noise recognition. Int. Sci. Journal for Alternative Energy and Ecology, #6, p.28 (2006).

 

 1/f Noise Novel Model: Phonon mechanism of mobility (equilibrium/non-equilibrium) fluctuations, (request list of additional publications over the model)

 

22. S.V. Melkonyan, V.M. Aroutiounian, F.V. Gasparyan, H.V. Asriyan. Phonon mechanism of mobility equilibrium fluctuation and properties of 1/f-noise. Physica, B: Physics of Condensed Matter, v.382, #1-2, pp.65-70 (2006).

 

Some minor attempts to trace practical applications for the models

 

23. F.V. Gasparyan, S.V. Melkonyan, H.V. Asriyan. Semiconductor-contacting media heterointerface as a low-frequency noise level regulator. Int.Conf. New Technologies for development of Heterosemiconductors for Device Applications, Sept., 21-23, 2006, Yerevan, Armenia, pp.56-57.

24. F.V. Gasparyan, S.V. Melkonyan, H.V. Asriyan. Semiconductor-metal interface as a 1/f noise level regulator. BPU-6 Sixth international conference of the balkan physical union, Istanbul /Turkey, AIP Conference Proceedings 899, 22 - 26 August, 2006.

25. F.V. Gasparyan, S.V. Melkonyan, H.V. Asriyan, C.E. Korman, B. Noaman, A.H. Arakelyan, A.A. Shatvetyan, A.M. Avetisyan. Short outline of silicon MOS-like structures fabrication techniques, CVC and noise measurements. Proc. of the 6th Int. Conf. on Semicond. Micro-& Nano-Electronics, Tsakhcadzor, Sept. 18-20, 2007. Yerevan, 2007, pp.153-156.

26. Reprint # 25: F.V.Gasparyan, S.V.Melkonyan, H.V. Asriyan, C.E. Korman, B. Noaman, A.H. Arakelyan, , A.A. Shatvetyan, and A.M. Avetisyan, Short outline of silicon mos-like structures fabrication techniques, cvc and noise measurements. The sixth international conference semiconductor micro  and nanoelectronics Tsakhkadzor, Armenia. September 18-20, 2007 Volume 1 (2008), Issue 1, pp. 118-122.

 

Conceptual reshaping of the "Phonon mechanism of mobility (equilibrium/non-equilibrium) fluctuations"

 

 

27. S.V. Melkonyan, F.V. Gasparyan, H.V. Asriyan. Main sources of electron mobility fluctuations in semiconductors. SPIE 4th Int. Symp. Fluctuation and Noise, 20-24 May 2007, Florence, Italy, Proceedings of SPIE, v. 6600, pp. 66001K-1  6600K-8 (2007).

28. F.V. Gasparyan, S.V. Melkonyan, and  H.V. Asriyan, Low frequency noises in semiconductors, MOS-like structures, gaz sensors and EIS based (bio-)chemical sensors. Proc. on 35 Anniversary of Foundation of Dept. of Radiophysics, Yerevan State University, Yerevan, 2010, pp.53-58.

29. S. V. Melkonyan,  H. V. Asriyan,  Ash. V. Surmalyan,  J. M. Smulko, Electron mobility variance in semiconductors: the variance approach, Armenian Journal of Physics, vol. 4, issue 1, pp. 62-73 (2011).

30. S.V. Melkonyan, H.V. Asriyan, Ash. V. Surmalyan, A.L. Harutyunyan, Electron mobility variance in the presence of an electric field, in Proc. 22nd Int. Conf. on Noise and Fluctuations (ICNF), 24-28 June 2013 (Montpellier, France), 2013 © IEEE,doi: [10.1109/ICNF.2013.6578972].

   

Intellectual Property


    • A.Z. Adamyan, Z.N. Adamian, V.M.Aroutiounian, H.V.Asriyan, Adsorption smoke detector, Armenian Patent N 1441 A2, 17.03.2004 priority 16.04.2003 (Supported up to now).
    • Vladimir M. Aroutiounian, Valeri M. Arakelyan, Khachatur S. Martirosyan, Vardan E. Galstyan, Hayk V. Asriyan, P. Soukiassian, Metal -oxide - Porous Silicon Based Gas Sensor, Armenian Patent N 2057A2,  22 December 2006 (Supported up to now).
    • Ferdinand V. Gasparyan, Hayk V. Asriyan, Slavik V. Melkonyan, Can E. Korman, Method of 1/f noise reduction and Noise Level Manipulation in semiconductor based devices, United States Patent Application 61/332,408 Filed May 7, 2010.
    • Ferdinand V. Gasparyan, Hayk V. Asriyan, Slavik V. Melkonyan, Can E. Korman, Method of 1/f noise level reduction and manipulation in semiconductor based devices, PCT Patent, International Application Number PCT/US11/35686, 09 May 2011.
    • S.A. Lapshin, H.V. Asriyan, Floating facility, a vessel with a transformable, hybrid wind power plant with wind protection and integrated with other energy sources RU, Priority August 2017.

Recent Commercial Promotional Presentations and Seminars

1) Hayk V. Asriyan,
Chemical nanosensors,  Spain-ISTC/STCU cooperation conference Madrid, 22-23 April 2010, An event under the Spanish Presidency of the EU, with support of the European Commission;
Part 1: Cursory Representation of the Organization’s Profile (R&D Center of Semiconductor Devices & Nanotechnologies), Part 2: Cursory Representation of Several Commercial R&D  Results (Presentation in 55 pages, available upon request on purpose verification:
hasriyan@ysu.am cc: kisahar@ysu.am ), and ISTC Promotional Brochure (3 pages).  

2) Hayk V. Asriyan, 3 July 2012, 29 Sept. 2012 "Peculiarities of conducting commercial R&D works in high technology companies. Development of competitive products. Integration of high technology companies into corporate structures" in ANEPA under the Pres. of the R.F. (70 pages).


3) Hayk V. Asriyan, 2013, 2014 Technology Commercialization Special Issues, Regional investment training (RSPK) in general partnership with Russian Venture Company (RVC, http://www.rusventure.ru/ru/), Loga Group ( http://www.logagroup.com/rspk/ ) Seed Forum International Program http://www.seedforum.org/
Training taked place in cities Astrakhan, Obninsk, , St. Petesburg, Kazan, Krasnoyarsk, Kirov, Dolgoprudniy, Samara, Kemerovo, Perm, Sarov (63 pages).


4) Hayk V. Asriyan, 2013 Technology Commercialization Issues, for Semi-finalists of Russian Federal Zworykin Award (30 pages).


5) Hayk V. Asriyan, 2013-2017 Technology Commercialization Special Issues for Skolkovo Companies and Russian Venture Company associated Innovation Funds, Companies, Projects. Private Seminars (170 pages), delivered in more than 30 Russian major cities from 2013-2017 in Technoparks, Universities and Business Incubators.


(more detailed list is available upon request)
updated August 2017
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